Qorvo, Inc., a provider of innovative RF solutions for the interconnected world, today announced the availability of a new asymmetric Doherty amplifier, the QPD2731, to help customers achieve ultra-high efficiency in designing wireless base station equipment. The new generation of silicon carbide-based GaN (GaN-on-SiC) solution uses two transistors in a single package to maximize linearity, efficiency and gain, and ultimately reduce operating costs.

"GaN devices can handle higher power compared to other high-frequency technologies such as GaAs and InP, and the frequency performance of GaN is better than other power technologies such as LDMOS," said Eric Higham, director of strategy globalization services.

"Today's telecom infrastructure is designed to achieve cost-effective benefits," said Roger Hall, general manager of Qorvo's High Performance Solutions business unit. "Our customers tell us that as carriers provide more functionality online, the new GaN-on -SiC QPD2731 transistors can achieve these goals. "

Because LDMOS and GaN-on-Si are inferior in thermal performance, customers are increasingly turning to GaN-SiC to dramatically improve the performance, linearity and efficiency of wireless base stations. QPD2731 achieves this transition by pre-matching discrete GaN-on-SiC high electron mobility transistors (HEMT). The new amplifiers currently offering samples provide the industry's highest performance range of 2.5 to 2.7 GHz.

According to Qorvo's previous release, the QPD2731 is linearized by a standard, commercially available third-party DPD system.